Semiconductor device, semiconductor module, and packaged semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors. The thickness of the backside electrode ranges from 25 to 35 μm, and the ratio of the thickness of the backside electrode to the thickness of a semiconductor layer including the semiconductor substrate and the low-concentration impurity layer is 0.32 or more.

CROSS REFERENCE TO RELATED APPLICATION

This application is a U.S. continuation application of PCT InternationalPatent Application Number PCT/JP2017/027829 filed on Aug. 1, 2017,claiming the benefit of priority of U.S. Provisional Patent ApplicationNo. 62/369,921 filed on Aug. 2, 2016, the entire contents of which arehereby incorporated by reference.

BACKGROUND 1. Technical Field

The present disclosure relates to a semiconductor device and asemiconductor module, and particularly relates to a multi-transistorchip and a module in which the multi-transistor chip is mounted.

2. Description of the Related Art

In a semiconductor device with a transistor formed on a siliconsubstrate, reduction of on resistance, and suppression of warpage thatoccurs to a chip due to heat are required. A low on resistance and smallchip warpage can contribute to improvement of both circuit operationefficiency and mounting yield.

For example, Japanese Unexamined Patent Application Publication No.2010-92895 discloses a semiconductor device in which a front sideelectrode and a backside electrode are formed from metals having samelinear expansion coefficients while the thicknesses of the electrodesare the same or substantially the same as each other in order tosuppress warpage due to heat at a time of use of the semiconductordevice. Japanese Unexamined Patent Application Publication No.2011-151350 indicates that the thicknesses of the front side electrodeand the backside electrode are set at 10 μm to 20 μm, as an example.Note that in Japanese Unexamined Patent Application Publication No.2010-92895, reduction of on resistance is not discussed.

Further, Japanese Unexamined Patent Application Publication No.2011-151350 discloses a semiconductor device capable of improving awarping amount of the backside electrode which is formed on a backsurface side of a silicon substrate and an on resistance value, and amethod for producing the semiconductor device. According to JapaneseUnexamined Patent Application Publication No. 2011-151350, thesemiconductor device in which a thickness of the backside electrode isapproximately 2 μm and an on resistance is approximately 3 mΩ isobtained.

SUMMARY

The inventors are studying a semiconductor device (hereinafter, referredto as a multi-transistor chip) in which two vertical metal-oxidesemiconductor (MOS) transistors are formed on a single siliconsubstrate, and drains of both the transistors are connected with abackside electrode in the device.

However, the semiconductor devices that are discussed in the related artliteratures are both single vertical MOS transistors, and neitherreduction of on resistance nor suppression of chip warpage in amulti-transistor chip are considered.

Therefore, an object of the present disclosure is to provide amulti-transistor chip excellent in reduction of on resistance andsuppression of chip warpage.

In order to solve the aforementioned problem, a semiconductor deviceaccording to an aspect of the present disclosure includes: asemiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical metal-oxide semiconductor (MOS) transistorthat is located in a first region in the low-concentration impuritylayer; and a second vertical MOS transistor that is located in a secondregion adjacent to the first region in the low-concentration impuritylayer, wherein the first vertical MOS transistor includes a first sourceelectrode and a first gate electrode on a surface of thelow-concentration impurity layer, the second vertical MOS transistorincludes a second source electrode and a second gate electrode on thesurface of the low-concentration impurity layer, the semiconductorsubstrate serves as a common drain region of a first drain region of thefirst vertical MOS transistor and a second drain region of the secondvertical MOS transistor, a thickness of the backside electrode rangesfrom 25 μm to 35 μm, inclusive, and a ratio of the thickness of thebackside electrode to a thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is 0.32or more.

According to this configuration, in any of the multi-transistor chips ofmodels A, B and C according to the embodiment, on resistance R is equalto or less than an on resistance specification maximum value of themodel.

According to the semiconductor device according to the presentdisclosure, the multi-transistor chip excellent in reduction of onresistance and suppression of chip warpage is obtained.

BRIEF DESCRIPTION OF DRAWINGS

These and other objects, advantages and features of the disclosure willbecome apparent from the following description thereof taken inconjunction with the accompanying drawings that illustrate a specificembodiment of the present disclosure.

FIG. 1 is a cross-sectional view illustrating an example of a stackingstructure of a multi-transistor chip according to an embodiment;

FIG. 2 is a circuit diagram illustrating an example of an applicationcircuit of the multi-transistor chip according to the embodiment;

FIG. 3 is a diagram illustrating product specifications and designexamples of the multi-transistor chip according to the embodiment;

FIG. 4A is a diagram illustrating measured values of on resistances andchip warpage of samples of model A;

FIG. 4B is a diagram illustrating measured values of on resistances andchip warpage of samples of model B;

FIG. 4C is a diagram illustrating measured values of on resistances andchip warpage of samples of model C;

FIG. 5 is a graph illustrating dependence of chip warpage W on ratio Qand dependence of on resistance R on ratio Q;

FIG. 6 is a graph illustrating dependence of ratio Q on diagonal lengthL;

FIG. 7 is a graph explaining derivation of ratio Q that compensates adimensional variation of an epi thickness or a diagonal length;

FIG. 8A is a top view illustrating an example of an electrode shape of amulti-transistor chip of model B;

FIG. 8B is a top view illustrating an example of an electrode shape of amulti-transistor chip of model C;

FIG. 9A is a perspective view illustrating an example of a mountingstructure of the semiconductor device according to the embodiment;

FIG. 9B is a perspective view illustrating an example of a mountingstructure of a semiconductor device according to a comparative example;and

FIG. 10 is a circuit diagram illustrating an example of an applicationcircuit of the multi-transistor chip according to the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENT (Underlying Knowledge Forming theBasis of the Disclosure)

Reduction of on resistance and suppression of chip warpage in amulti-transistor chip will be discussed.

In each of single vertical MOS transistors discussed in the related artliteratures, a drain current flows through a backside electrode in athickness direction, and therefore in order to reduce the on resistance,it is necessary to make the backside electrode thin. In contrast withthis, in the multi-transistor chip, a drain current flows in thebackside electrodes between the transistors, so that by making thebackside electrodes thick, a sectional area of a current path betweenthe two transistors is increased, and the entire on resistance can bereduced. That is, in order to obtain a multi-transistor chip with a lowon resistance, it is effective to increase the thickness of the backsideelectrode more than the thickness of the conventional backsideelectrode.

Note that a backside electrode is generally composed of a metal materialsuch as silver, and the metal material has a larger thermal expansioncoefficient as compared with silicon. Consequently, when the backsideelectrode is made thick, the semiconductor device easily warps.Accordingly, when the backside electrode is made thick to obtain a lowon resistance, suppression of warpage also needs to be sufficientlyconsidered.

It goes against reduction of on resistance to increase the thickness ofthe backside electrode in a single vertical MOS transistor, so that inthe related art literatures, a suitable structure to suppress warpage isnot discussed concerning a semiconductor device having a thick backsideelectrode with a thickness of more than 20 μm. Further, specificexamples of the on resistance disclosed in the related art literaturesare approximately 3 mΩ.

Therefore, as a result of an intensive study, the inventors have found afirst dimensional requirement and an electrode shape that reduce an onresistance to a predetermined target value or less, and a seconddimensional requirement that suppresses chip warpage to a predeterminedtarget value or less, with respect to a multi-transistor chip having abackside electrode with a thickness of approximately 30 μm that isthicker than the conventional backside electrodes. The target value ofthe on resistance is set at an extremely low value of less than 3 mΩ,and the first and second dimensional requirements include prescriptionsregarding a ratio of a thickness of the backside electrode to athickness of a semiconductor substrate.

(Aspects of Disclosed Semiconductor Device)

A semiconductor device according to an aspect of the present disclosureincludes: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical metal-oxide semiconductor (MOS) transistorthat is located in a first region in the low-concentration impuritylayer; and a second vertical MOS transistor that is located in a secondregion adjacent to the first region in the low-concentration impuritylayer, wherein the first vertical MOS transistor includes a first sourceelectrode and a first gate electrode on a surface of thelow-concentration impurity layer, the second vertical MOS transistorincludes a second source electrode and a second gate electrode on thesurface of the low-concentration impurity layer, the semiconductorsubstrate serves as a common drain region of a first drain region of thefirst vertical MOS transistor and a second drain region of the secondvertical MOS transistor, a thickness of the backside electrode rangesfrom 25 μm to 35 μm, inclusive, and a ratio of the thickness of thebackside electrode to a thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is 0.32or more.

According to the configuration, in any of the multi-transistor chips ofmodels A, B and C according to the embodiment, on resistance R is equalto or less than an on resistance specification maximum value of themodel.

Furthermore, the ratio may be 0.56 or less.

According to the configuration, in any one of the multi-transistor chipsof models A, B and C according to the embodiment, on resistance R isequal to or less than an on resistance specification maximum value ofthe model, and chip warpage is equal to or less than a chip warpagespecification maximum value.

Furthermore, the thickness of the low-concentration impurity layer maybe 2.75 μm or more.

According to the configuration, in the multi-transistor chips of modelsA, B and C according to the embodiment, a drain breakdown voltage of 20V is obtained.

Furthermore, a semiconductor device according to an aspect of thepresent disclosure includes: a semiconductor substrate that includessilicon and a first conductivity-type impurity; a low-concentrationimpurity layer that is on and in contact with the semiconductorsubstrate, and includes a first conductivity-type impurity having aconcentration lower than a concentration of the first conductivity-typeimpurity in the semiconductor substrate; a backside electrode that is onand in contact with a back surface of the semiconductor substrate, andincludes a metal material; a first vertical MOS transistor that islocated in a first region in the low-concentration impurity layer; and asecond vertical MOS transistor that is located in a second regionadjacent to the first region in the low-concentration impurity layer.The first vertical MOS transistor includes a first source electrode anda first gate electrode on a surface of the low-concentration impuritylayer, the second vertical MOS transistor includes a second sourceelectrode and a second gate electrode on the surface of thelow-concentration impurity layer, the semiconductor substrate serves asa common drain region of a first drain region of the first vertical MOStransistor and a second drain region of the second vertical MOStransistor, a thickness of the backside electrode ranges from 25 μm to35 μm, inclusive, and when a diagonal dimension of the semiconductorsubstrate in a plan view is set as L mm, a ratio of a thickness of thebackside electrode to a thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is(−0.48×L+2.45) or less.

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, chip warpage is equal toor less than the chip warpage specification maximum value.

A semiconductor device according to an aspect of the present disclosureincludes: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical MOS transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer. The first vertical MOStransistor includes a first source electrode and a first gate electrodeon a surface of the low-concentration impurity layer, the secondvertical MOS transistor includes a second source electrode and a secondgate electrode on the surface of the low-concentration impurity layer,the semiconductor substrate serves as a common drain region of a firstdrain region of the first vertical MOS transistor and a second drainregion of the second vertical MOS transistor, a thickness of thebackside electrode ranges from 25 μm to 35 μm, inclusive, and when adiagonal dimension of the semiconductor substrate in a plan view is setas L mm, a ratio of a thickness of the backside electrode to a thicknessof a semiconductor layer including the semiconductor substrate and thelow-concentration impurity layer is (−0.48×L+2.07) or more.

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, the on resistance R isequal to or less than an on resistance specification standard value.

Furthermore, the ratio may be at least (−0.48×L+2.07) and at most(−0.48× L+2.45).

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, the on resistance isequal to or less than the on resistance specification standard value,and the chip warpage is equal to or less than the chip warpagespecification maximum value.

Furthermore, when a thickness of the low-concentration impurity layer is2.18 μm or less and a diagonal dimension of the semiconductor substratein a plan view is 2.69 mm or more, the ratio may be 0.78 or more.

According to the configuration, in a multi-transistor chip of model Aaccording to the embodiment, the on resistance specification standardvalue is achieved.

Furthermore, when the thickness of the low-concentration impurity layeris 2.18 μm or less and the diagonal dimension ranges from 2.61 mm to2.69 mm, inclusive, or when the thickness of the low-concentrationimpurity layer ranges from 2.18 μm to 2.24 μm, inclusive, and thediagonal dimension is 2.69 mm or more, the ratio may be 0.94 or more.

According to the configuration, even when a multi-transistor chip ofmodel A according to the embodiment has a predetermined dimensionalerror, the on resistance R is equal to or less than an on resistancespecification standard value of model A.

Furthermore, when a thickness of the low-concentration impurity layer is2.18 μm or less and a diagonal dimension of the semiconductor substratein a plan view is 3.63 mm or more, the ratio may be 0.33 or more.

According to the configuration, in a multi-transistor chip of model Caccording to the embodiment, an on resistance specification standardvalue is achieved.

Furthermore, when the thickness of the low-concentration impurity layeris 2.18 μm or less and the diagonal dimension ranges from 3.55 mm to3.63 mm, inclusive, or when the thickness of the low-concentrationimpurity layer ranges from 2.18 μm to 2.24 μm, inclusive, and thediagonal dimension is 3.63 mm or more, the ratio may be 0.43 or more.

According to the configuration, even when a multi-transistor chip ofmodel C according to the embodiment has a predetermined dimensionalerror, on resistance R is equal to or less than an on resistancespecification standard value of model C.

Furthermore, the ratio may be 0.70 or less.

According to the configuration, in a multi-transistor chip of model Caccording to the embodiment, a chip warpage specification maximum valueis achieved.

Furthermore, when a thickness of the low-concentration impurity layer is2.75 μm or less, and a diagonal dimension of the semiconductor substratein a plan view is 3.92 mm or more, the ratio may be 0.25 or more.

According to the configuration, in a multi-transistor chip of model Baccording to the embodiment, an on resistance specification standardvalue is achieved.

Furthermore, when the thickness of the low-concentration impurity layeris 2.75 μm or less and the diagonal dimension ranges from 3.84 mm to3.92 mm, inclusive, or when the thickness of the low-concentrationimpurity layer ranges from 2.75 μm to 2.81 μm, inclusive, and thediagonal dimension is 3.92 mm or more, the ratio may be 0.33 or more.

According to the configuration, even when a multi-transistor chip ofmodel B according to the embodiment has a predetermined dimensionalerror, on resistance R is equal to or less than the on resistancespecification standard value of model B.

Furthermore, the ratio may be 0.56 or less.

According to the configuration, in a multi-transistor chip of model Baccording to the embodiment, a chip warpage specification maximum valueis achieved.

A semiconductor device according to an aspect of the present disclosureincludes: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical MOS transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer. The first vertical MOStransistor includes a first source electrode and a first gate electrodeon a surface of the low-concentration impurity layer, the secondvertical MOS transistor includes a second source electrode and a secondgate electrode on the surface of the low-concentration impurity layer,the semiconductor substrate serves as a common drain region of a firstdrain region of the first vertical MOS transistor and a second drainregion of the second vertical MOS transistor, a ratio of a thickness ofthe first source electrode to a thickness of the backside electrode is0.28 or less, and a ratio of a thickness of the second source electrodeto the thickness of the backside electrode is 0.28 or less.

According to the configuration, with respect to the thickness of thebackside electrode, favorable thicknesses of the first and second sourceelectrodes are defined, so that the multi-transistor chip is obtained,in which the bonding performance with the conductive bonding material,lower on resistance and cost reduction are achieved in a well-balancedway.

A semiconductor device according to an aspect of the present disclosureincludes: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical MOS transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer. The first vertical MOStransistor includes a plurality of first source electrodes and a firstgate electrode on a surface of the low-concentration impurity layer, thesecond vertical MOS transistor includes a plurality of second sourceelectrodes and a second gate electrode on the surface of thelow-concentration impurity layer, the semiconductor substrate serves asa common drain region of a first drain region of the first vertical MOStransistor and a second drain region of the second vertical MOStransistor, and a third source electrode included in the plurality ofthe first source electrodes and a fourth source electrode included inthe plurality of the second source electrodes are source electrodesdisposed closest to a boundary between the first region and the secondregion, the third source electrode and the fourth source electrodeextending along an entirety of the boundary.

According to the configuration, a path of a current that flows betweenthe two vertical MOS transistors becomes wider and shorter, so that theon resistance of the multi-transistor chip can be reduced.

Furthermore, an interval between the third source electrode and thefourth source electrode may be narrower than a width of the third sourceelectrode and narrower than a width of the fourth source electrode.

According to the configuration, the path of the current that flowsbetween the two vertical MOS transistors can be made wider and shorter,so that the on resistance of the multi-transistor chip can be reducedmore effectively.

Furthermore, an interval between the third source electrode and thefourth source electrode may be wider than a width of the third sourceelectrode and wider than a width of the fourth source electrode.

According to the configuration, the region where solder is not disposedcan be taken widely, so that short circuits between patterns can beavoided while the path of the current that flows between the twovertical MOS transistors is made wider and shorter.

A semiconductor device according to an aspect of the present disclosureincludes: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical MOS transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer. The first vertical MOStransistor includes a first source electrode and a first gate electrodeon a surface of the low-concentration impurity layer, the secondvertical MOS transistor includes a second source electrode and a secondgate electrode on the surface of the low-concentration impurity layer,the semiconductor substrate serves as a common drain region of a firstdrain region of the first vertical MOS transistor and a second drainregion of the second vertical MOS transistor, the first source electrodecomprises, between (i) a boundary of the first region and the secondregion and (ii) a first opposite end which is an end of the first regionthat is opposite to the boundary, a plurality of first source electrodesaligned in a direction that crosses the boundary, the first gateelectrode is disposed at a position that is near a center of the firstopposite end in a direction parallel to the boundary and between a pairof the plurality of first source electrodes in the direction parallel tothe boundary, a center point of the first gate electrode is disposed ata position that is offset toward the first opposite end from aboundary-side end of a first source electrode farthest from theboundary, in the first region, the boundary-side end being an end of thefirst source electrode that is closest to the boundary, the secondsource electrode comprises, between the boundary and a second oppositeend which is an end of the second region that is opposite to theboundary, a plurality of second source electrodes aligned in a directionthat crosses the boundary, the second gate electrode is disposed at aposition that is near a center of the second opposite end in a directionparallel to the boundary and between a pair of the plurality of secondsource electrodes in the direction parallel to the boundary, and acenter point of the second gate electrode is disposed at a position thatis offset toward the second opposite end from a boundary-side end of asecond source electrode farthest from the boundary, in the secondregion, the boundary-side end being an end of the second sourceelectrode that is closest to the boundary.

According to the configuration, the first gate electrode and the secondgate electrode are disposed farther from the boundary, so that even whenchip warpage occurs to the semiconductor substrate and the vicinity ofthe boundary is lifted from the mounting board, solder open hardlyoccurs between the first gate electrode and the second gate electrodeand the mounting board.

Furthermore, a semiconductor module according to an aspect of thepresent disclosure includes: a printed wiring board; a wiring patternthat is provided in a strip shape on the printed wiring board, and isseparated into a first section and a second section by a gap thatcrosses a longitudinal direction of the wiring pattern; and theabove-described semiconductor device that is disposed on the gap. Thesemiconductor device is disposed in an orientation in which the firstregion and the second region align in a longitudinal direction of thewiring pattern, and the first source electrode and the second sourceelectrode are respectively connected to the first section and the secondsection of the wiring pattern.

According to the configuration, a wiring width can be increased and awiring resistance can be reduced. Further, the current path becomesrectilinear, and a wiring loss can be reduced. As a result, thesemiconductor module having the mounting structure excellent in powerefficiency is obtained.

Furthermore, a packaged semiconductor device according to an aspect ofthe present disclosure includes: the above described semiconductordevice; and a package in which the semiconductor device is sealed, thepackage having a first source external terminal, a first gate externalterminal, a second source external terminal, and a second gate externalterminal. The first source external terminal, the first gate externalterminal, the second source external terminal, and the second gateexternal terminal are electrically connected respectively to the firstsource electrode, the first gate electrode, the second source electrode,and the second gate electrode of the semiconductor device.

According to the configuration, the packaged semiconductor device isobtained, which has the multi-transistor chip excellent in reduction ofthe on resistance and suppression of chip warpage, and having highdurability against environmental conditions.

Furthermore, a packaged semiconductor device according to an aspect ofthe present disclosure includes: the above-described semiconductordevice; and a package in which the semiconductor device is sealed, thepackage having a first source external terminal, a first gate externalterminal, a second source external terminal, a second gate externalterminal, and a common drain external terminal. The first sourceexternal terminal, the first gate external terminal, the second sourceexternal terminal, the second gate external terminal, and the commondrain external terminal are electrically connected respectively to thefirst source electrode, the first gate electrode, the second sourceelectrode, the second gate electrode, and the backside electrode of thesemiconductor device.

According to the configuration, the packaged semiconductor device isobtained, which has the multi-transistor chip excellent in reduction ofthe on resistance and suppression of chip warpage, has high durabilityagainst the environmental conditions, and can use the common drainexternal terminal in voltage monitor for the common drain of the firstand second vertical MOS transistors in the multi-transistor chip, forexample.

Hereinafter, the semiconductor device according to the disclosure willbe described specifically with reference to the drawings.

Embodiments that will be described hereinafter each shows a specificexample of the present disclosure. The numerical values, shapes,materials, components, disposing positions and connecting modes of thecomponents and the like shown in the following embodiments are onlyexamples, and do not intend to restrict the present disclosure. Further,out of the components in the following embodiments, components that arenot described in independent claims showing the most superordinateconcepts are described as arbitrary components.

(Basic Structure of Semiconductor Device)

First, as preparation, a basic structure of the semiconductor deviceaccording to the present disclosure will be described. The semiconductordevice according to the present disclosure is a CSP (chip size package)type multi-transistor chip in which two vertical MOS transistors areformed on a semiconductor substrate.

FIG. 1 is a cross-sectional view illustrating an example of a structureof multi-transistor chip 1. As illustrated in FIG. 1, multi-transistorchip 1 includes semiconductor substrate 32, low-concentration impuritylayer 33, backside electrode 31, first vertical MOS transistor 10(hereinafter, transistor 10), and second vertical MOS transistor 20(hereinafter, transistor 20).

FIG. 2 is a charge and discharge circuit of a smartphone or the like,and illustrates a case in which multi-transistor chip 1 is inserted intoa low side of the charge and discharge circuit, and is used as a chargeand discharge switch that controls conduction of two-way currents, as anapplication example.

In this case, multi-transistor chip 1 is used as a two-way transistorthat controls a discharge current from battery 3 to load 4 and a chargecurrent from load 4 to battery 3, in response to a control signal thatis given by control IC 2, and the discharge current is cut off bybringing transistor 10 into an off state, whereas the charge current iscut off by bringing transistor 20 into an off state.

In a MOS transistor, a body diode is present as a parasite elementbetween a drain terminal and a source terminal due to a deviceconfiguration of the MOS transistor (for example, BD1 in transistor 10and BD2 in transistor 20 in FIG. 2), so that with a single MOStransistor, two-way currents between drain and source terminals cannotbe cut off. Therefore, when two-way currents are cut off, two MOStransistors are generally used by being connected with drain terminalsor source terminals facing each other.

In multi-transistor chip 1 illustrated in FIG. 1, semiconductorsubstrate 32 includes silicon and a first conductivity-type impurity.

Low-concentration impurity layer 33 is formed on semiconductor substrate32 in contact with semiconductor substrate 32, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in semiconductorsubstrate 32. Low-concentration impurity layer 33 may be formed onsemiconductor substrate 32 by epitaxial growth as an example.

A thickness of a semiconductor layer including semiconductor substrate32 and low-concentration impurity layer 33 (also referred to as Sithickness) is described as b, and a thickness of only low-concentrationimpurity layer 33 (also referred to as an epi thickness) is described asc.

Backside electrode 31 is composed of a metal material formed on a backsurface (upper side principal surface in FIG. 1) of semiconductorsubstrate 32 in contact with the back surface. Backside electrode 31 maybe composed of a metal material including at least any one of silver,copper, gold and aluminum, as a non-limiting example. A thickness ofbackside electrode 31 (also referred to as an Ag thickness) is describedas a.

Transistor 10 is formed in a first region (right side half region inFIG. 1) in low-concentration impurity layer 33, and includes firstsource electrode 11 and first gate electrode 19 that is in anothersection, on a surface (lower side principal surface in FIG. 1) oflow-concentration impurity layer 33.

In a first region of low-concentration impurity layer 33, first bodyregion 18 including a second conductivity-type impurity having a secondconductivity type different from the first conductivity-type is formed.In first body region 18, first source region 14 including a firstconductivity-type impurity, first gate conductor 15 and first gateinsulation film 16 are formed. First source electrode 11 includes firstportion 12 and second portion 13, and first portion 12 is connected tofirst source region 14 and first body region 18 via second portion 13.First gate electrode 19 is connected to first gate conductor 15.

First portion 12 of first source electrode 11 is a layer showing afavorable bonding performance with a conductive bonding material such assolder at a time of mounting, and may be composed of a metal materialincluding at least any one or more of nickel, titanium, tungsten andpalladium as a non-limiting example. Plating of gold or the like may beapplied to a surface of first portion 12.

Second portion 13 of first source electrode 11 is a layer that connectsfirst portion 12 and a semiconductor layer, and may be composed of ametal material including at least any one or more of aluminum, copper,gold and silver as a non-limiting example.

A thickness of first source electrode 11 is described as d1. Thicknessd1 of first source electrode 11 includes a thickness of first portion 12and a thickness of second portion 13 of first source electrode 11.

Transistor 20 is formed in a second region (left side half region inFIG. 1) in low-concentration impurity layer 33, and includes secondsource electrode 21 and second gate electrode 29 that is in anothersection, on the front surface (lower principal surface in FIG. 1) oflow-concentration impurity layer 33.

In the second region of low-concentration impurity layer 33, second bodyregion 28 including a second conductivity-type impurity having a secondconductivity type different from a first conductivity-type is formed. Insecond body region 28, second source region 24 including a firstconductivity-type impurity, second gate conductor 25 and second gateinsulation film 26 are formed. Second source electrode 21 includes firstportion 22 and second portion 23, and first portion 22 is connected tosecond source region 24 and second body region 28 via second portion 23.Second gate electrode 29 is connected to second gate conductor 25.

First portion 22 of second source electrode 21 may be composed of ametal material including any one or more of nickel, titanium, tungstenand palladium as a non-limiting example, and plating of gold or the likemay be applied to a surface of first portion 22. Second portion 23 ofsecond source electrode 21 may be composed of a metal material includingany one or more of aluminum, copper, gold and silver as a non-limitingexample.

A thickness of second source electrode 21 is described as d2. Thicknessd2 of second source electrode 21 includes a thickness of first portion22 and a thickness of second portion 23 of second source electrode 21.Thickness d1 of first source electrode 11 and thickness d2 of secondsource electrode 21 may be equal to each other.

Semiconductor substrate 32 serves as a common drain region of a firstdrain region of transistor 10 and a second drain region of transistor20.

In multi-transistor chip 1 illustrated in FIG. 1, for example, bysetting the first conductivity-type as an N-type and the secondconductivity-type as a P-type, first source region 14, second sourceregion 24, semiconductor substrate 32 and low-concentration impuritylayer 33 may be N-type semiconductors, and first body region 18 andsecond body region 28 may be P-type semiconductors.

Further, for example, by setting the first conductivity-type as aP-type, and the second conductivity-type as an N-type, first sourceregion 14, second source region 24, semiconductor substrate 32 andlow-concentration impurity layer 33 may be P-type semiconductors, andfirst body region 18 and second body region 28 may be N-typesemiconductors.

In the following explanation, a case of a so-called N-channel typetransistor in which the first conductivity-type is set as an N-type andthe second conductivity-type is set as a P-type in multi-transistor chip1 illustrated in FIG. 1 will be described, unless otherwise noted.

First, an on state of multi-transistor chip 1 will be described.

When a high voltage is applied to first source electrode 11, a lowvoltage is applied to second source electrode 21, and a voltage of athreshold value or more is applied to first gate electrode 19 (firstgate conductor 15) and second gate electrode 29 (second gate conductor25) with second source electrode 21 as a reference in multi-transistorchip 1 illustrated in FIG. 1, a channel is formed in vicinities of firstgate insulation film 16 and second gate insulation film 26, and acurrent flows between first source electrode 11 and second sourceelectrode 21 in a path shown by arrows in FIG. 1.

This is a case of a charging current in FIG. 2, and is the on state ofmulti-transistor chip 1 in which transistors 10 and 20 are in electricalcontinuity and an on current flows.

The on current between transistors 10 and 20 flows in backside electrode31, as illustrated in arrows in FIG. 1. Consequently, by increasingthickness a of backside electrode 31, a sectional area of the path forthe on current enlarges, and an on resistance of multi-transistor chip 1is reduced.

Next, an off state of multi-transistor chip 1 will be described.

When the first conductivity-type is an N-type, and the secondconductivity-type is a P-type in multi-transistor chip 1 illustrated inFIG. 1, PN junctions between first body region 18 and low-concentrationimpurity layer 33, and between second body region 28 andlow-concentration impurity layer 33 are respectively body diodes BD1 andBD2 in polarity directions shown by diode symbols in FIG. 1.

When a voltage of second gate electrode 29 (second gate conductor 25) isless than a threshold value with second source electrode 21 as areference in multi-transistor chip 1 illustrated in FIG. 1, a channel isnot formed in a vicinity of gate insulation film 26 of transistor 20even if a high voltage is applied to first source electrode 11, and alow voltage is applied to second source electrode 21, andmulti-transistor chip 1 is in an off state in which the on current doesnot flow. At this time, a bias state in transistor 10 is a bias state ina forward direction with respect to body diode BD1, so that transistor10 is in a conducting state independently from the voltage which isapplied to first gate electrode 19 (first gate conductor 15).

When voltage application conditions to first source electrode 11 andsecond source electrode 21 are opposite, that is, a high voltage isapplied to second source electrode 21, and a low voltage is applied tofirst source electrode 11, a channel is not formed in a vicinity of gateinsulation film 16 of transistor 10 if a voltage of first gate electrode19 (first gate conductor 15) is less than a threshold value with firstsource electrode 11 as a reference, and multi-transistor chip 1 is in anoff state in which the on current does not flow.

(Source to Source Breakdown Voltage of Multi-Transistor Chip)

Here, a source to source breakdown voltage (abbreviated as BVSS) ofmulti-transistor chip 1 will be described.

The source to source breakdown voltage of multi-transistor chip 1 refersto a maximum voltage that can be applied to between first sourceelectrode 11 and second source electrode 21 of multi-transistor chip 1in an off state within a range in which multi-transistor chip 1 does notbreak down. This is a maximum voltage that can be applied within a rangein which body diodes BD1 and BD2 do not break down, and has the samemeaning as a drain breakdown voltage in each of transistors 10 and 20alone. In the following explanation, for simplification, the source tosource breakdown voltage of multi-transistor chip 1 may be called adrain breakdown voltage of multi-transistor chip 1.

The drain breakdown voltage of multi-transistor chip 1 will be describedin more detail. The drain breakdown voltage at a time of applying a highvoltage to first source electrode 11 of multi-transistor chip 1 and alow voltage to second source electrode 21 relates to depletion layersthat are present at both sides of a boundary of a PN junction of bodydiode BD2 contained in transistor 20.

When a high voltage is applied to first source electrode 11, and a lowvoltage is applied to second source electrode 21, a reverse-directionvoltage is applied to a PN junction of low-concentration impurity layer33 (N-type semiconductor) and second body region 28 (P-typesemiconductor) in transistor 20.

In this case, the reverse-direction voltage is applied, so that acurrent from low-concentration impurity layer 33 to second body region28 does not flow, but when the applied voltage is gradually increased,avalanche breakdown (simply referred to as breakdown in the presentspecification) occurs in the PN junction, and a current flows at once.The applied voltage just before the avalanche breakdown occurs is adrain breakdown voltage.

In order to increase the drain breakdown voltage, thicknesses of thedepletion layers formed at both sides of the boundary oflow-concentration impurity layer 33 and second body region 28 areincreased to make it difficult for avalanche breakdown to occur. Forthis reason, a device structure in which the depletion layers can spreadout sufficiently is designed.

The depletion layers spread out at both sides with the boundary oflow-concentration impurity layer 33 and second body region 28 betweenthe depletion layers, but since the impurity concentration oflow-concentration impurity layer 33 is set to be lower than the impurityconcentration of second body region 28, the depletion layer spreads outgreatly to a side of low-concentration impurity layer 33. Accordingly, athickness of the low-concentration impurity layer 33 is designed with amargin in consideration of spreading of the depletion layer.

Further, it is known that N-type impurities diffuse from semiconductorsubstrate 32 to low-concentration impurity layer 33, due to a thermalhysteresis that occurs during a device fabrication process. This meansthat an effective film thickness of low-concentration impurity layer 33decreases. In order to secure a sufficient spread of the depletionlayers, it is necessary to design the layer thickness oflow-concentration impurity layer 33 also considering a decrease of theeffective thickness.

Same explanation is established with respect to low-concentrationimpurity layer 33 and first body region 18 of transistor 10 when a lowvoltage is applied to first source electrode 11 and a high voltage isapplied to second source electrode 21.

In consideration of the above, in multi-transistor chip 1, a drainbreakdown voltage of 12 V or 20 V is secured with a design margin byadopting the following design examples.

A concentration of impurities (for example, arsenide or phosphorous) insemiconductor substrate 32 is set as 3×10²⁰/cm³, and a concentration ofimpurities (for example, phosphor) in low-concentration impurity layer33 is set as 3.4×10¹⁶/cm³. Further, a concentration of impurities (forexample, boron) in first body region 18 and second body region 28 is setas 5×10¹⁷/cm³.

When the drain breakdown voltage is set as 12 V, thickness c oflow-concentration impurity layer 33 is set as 2.18 μm or more. When thedrain breakdown voltage is set as 20 V, thickness c of low-concentrationimpurity layer 33 is set as 2.75 μm or more.

(Product Specifications and Design Example of Multi-Transistor Chip)

FIG. 3 is a diagram illustrating specifications and a design example ofeach of models of the multi-transistor chip according to the embodiment.

First, as illustrated in FIG. 3, the inventors set productspecifications concerning drain breakdown voltage BVSS, on resistance Rand chip warpage W with respect to three models of the multi-transistorchip according to the embodiment. Here, drain breakdown voltage BVSSrefers to the source to source breakdown voltage of multi-transistorchip 1 described above. On resistance R refers to a resistance valuebetween the source and source of multi-transistor chip 1 at a time ofapplication of a gate to source voltage of 3.8 V. Chip warpage W refersto a maximum difference in elevation that occurs along the diagonal lineof a bare chip of multi-transistor chip 1 by application of thermal loadof a maximum temperature of 250° C.

Model A is a normal model in which drain breakdown voltage BVSS is 12 V,on resistance specification maximum value R max is 2.85 mΩ, and chipwarpage specification maximum value W max is 40 μm. 2.19 mΩ to 2.38 mΩof on resistance specification standard value R typ are calculationvalues that are obtained by dividing on resistance specification maximumvalue R max by design margin coefficients 1.3 to 1.2.

Model B is a high breakdown voltage model in which drain breakdownvoltage BVSS is 20 V, on resistance specification maximum value R max is2.85 mΩ, and chip warpage specification maximum value W max is 40 μm.2.19 mΩ to 2.38 mΩ of on resistance specification standard value R typare calculation values obtained by dividing on resistance specificationmaximum value R max by design margin coefficients 1.3 to 1.2.

Model C is a low resistance model with drain breakdown voltage BVSS is12 V, on resistance specification maximum value R max is 1.95 mΩ, andchip warpage specification maximum value W max is 40 μm. 1.50 mΩ to 1.63mΩ of on resistance specification standard value R typ are calculationvalues obtained by dividing on resistance specification maximum value Rmax by design margin coefficients 1.3 to 1.2.

Drain breakdown voltage BVSS and on resistance specification maximumvalue R max illustrated in FIG. 3 are defined based on a request by anapplication circuit (for example, a charge and discharge circuit of abattery provided in a mobile computing device).

Further, chip warpage specification maximum value W max is defined asfollows based on “Measurement methods of package warpage at elevatedtemperature and the maximum permissible warpage” described in JEITAED-7306 Standard of Japan Electronics and Information TechnologyIndustries Association.

In multi-transistor chip 1, a thermal expansion coefficient of backsideelectrode 31 is larger than a thermal expansion coefficient ofsemiconductor substrate 32, so that by rising a temperature, chipwarpage raised to a side of backside electrode 31 occurs. When chipwarpage is large, a central portion of multi-transistor chip 1 is liftedfrom the mounting substrate by reflow heating at the time of mounting,and mounting yield is worsened.

In “Measurement methods of package warpage at elevated temperature andthe maximum permissible warpage” described in JEITA ED-7306 Standard ofJapan Electronics and Information Technology Industries Association, themaximum permissible warpage of, for example, FLGA (flat land grid array)package is defined as a height of solder paste after melting. Whensolder paste of a height of 80 μm is disposed by printing using astencil of a thickness of 80 μm as an example, in a mounting process,the height of the solder paste after melting is estimated to lower to 59μm corresponding to 74% that is a filling factor of a face-centeredcubic lattice. Therefore, in the present disclosure, 40 μm with thedesign margin coefficient further reduced to approximately ⅔ is set asthe chip warpage specification maximum value.

Next, the inventors considered dimensional requirements and electrodeshape of the multi-transistor chip of each model with the followingpolicy based on the product specifications in FIG. 3.

Drain breakdown voltage BVSS is achieved in accordance with epithickness c that is the thickness of low-concentration impurity layer33. For example, by setting epi thickness c at 2.18 μm or more, thedrain breakdown voltage of 12 V is achieved. Further, the drainbreakdown voltage of 20 V is achieved by setting epi thickness c at 2.75μm or more.

On resistance R is reduced by providing backside electrode 31 thickly.As an example, by setting an Ag thickness that is the thickness ofbackside electrode 31 at 30 μm, and increasing a sectional area of acurrent path in the backside electrode, on resistance R is reduced. Sithickness b that is the thickness of the semiconductor layer includingsemiconductor substrate 32 and low-concentration impurity layer 33 ofthe semiconductor layer is set at 43 μm in models A and C, and is set at78 μm in model B, as an example. At this time, ratio Q of Ag thickness ato Si thickness b is 0.70 in models A and C, and is 0.38 in model B.Ratios Q of these models are typical examples that achieve the productspecifications concerning on resistance R and chip warpage W inrespective models A, B and C.

A package size is set to be equivalent to or less than the conventionalmodel (not illustrated). Area resistance rate Ron·A is reduced, so thaton resistance R which is equivalent to on resistance R of theconventional model can be realized with a smaller package size, andlower on resistance R can be realized with a package size equivalent tothe package size of the conventional model.

Specifically, a package size of model A was made a rectangle of 1.96 mmin length and 1.84 mm in width in a plan view. A length of a diagonalline of a package of model A, that is, diagonal line L is 2.69 mm. Inmodel A, a side shown in a vertical direction in FIG. 3 is a long side.

A package size of model B was made a rectangle of 1.96 mm in length and3.40 mm in width in a plan view. A length of a diagonal line of apackage of model B, that is, diagonal length L is 3.92 mm. In model B, aside shown in a lateral direction in FIG. 3 is a long side.

A package size of model C was made a rectangle of 1.96 mm in length and3.05 mm in width in a plan view. A length of a diagonal line of apackage of model C, that is, diagonal length L is 3.63 mm. In model C, aside shown in the lateral direction in FIG. 3 is a long side.

Since multi-transistor chip 1 is a chip size package, a package size, asize of multi-transistor chip 1 and a size of semiconductor substrate 32are all same. That is, the diagonal length of the package is expressedby a diagonal dimension of semiconductor substrate 32 in a plan view.

FIG. 3 illustrates disposition of a source pad (described as an S pad)and a gate pad (described as a G pad) at a time of the package been seenin a plan view as a chip general view. Here, the S pads refer to exposedportions to a chip surface, of first source electrode 11 and secondsource electrode 21, and G pads refer to exposed portions to the chipsurface, of first gate electrode 19 and second gate electrode 29.

In model A, the G pads are disposed to a center with respect to a chiplong side, and the S pads are disposed by being separated to twoportions along a boundary of two transistors. In each of model B andmodel C, the G pads are disposed to ends with respect to chip longsides, and the S pads are disposed to be close to the boundary of twotransistors in an entire area. In the mounting process of package, the Spads and the G pads are attached to the mounting substrate by using aconductive bonding material such as solder.

Note that technical meaning of disposition of the S pads and G padsillustrated in FIG. 3 will be described in detail later.

Next, considering that reduction of on resistance R and suppression ofchip warpage W are in a trade-off relationship, a favorable range ofratio Q of thickness a of backside electrode 31 (Ag thickness) tothickness b of the semiconductor layer (Si thickness) includingsemiconductor substrate 32 and low-concentration impurity layer 33 willbe discussed in detail.

(Experiment for Obtaining Favorable Conditions of Ratio Q)

The inventors obtained the favorable range of ratio Q by an experiment.In the experiment, a plurality of samples each having epi thickness cand the package size (diagonal length L) illustrated in FIG. 3, butdiffering in Ag thickness a and Si thickness b were produced.Subsequently, on resistances and chip warpage of the individual sampleswere measured, and whether or not the on resistances and chip warpagesatisfy the product specifications was confirmed.

As for on resistance R, each sample was measured by either one of afirst method of measuring on resistance R in a state where the sample ismounted on an evaluation substrate, and a second method of measuring ina state of a bare chip by applying a probe. A difference in measurementvalue that occurs due to difference in measurement method was properlycorrected.

As for chip warpage W, the sample in the state of a bare chip was placedunder a thermal load cycle with a maximum temperature of 250° C.simulating a reflow process, a shape of the bare chip was measured by amoire method, and a maximum value of measured chip warpage was recorded.

FIG. 4A is a diagram illustrating measured values of the on resistanceand warpage of samples of model A. In model A, a plurality of sampleswith Si thicknesses b being between 28 μm to 93 μm were produced, withrespect to the respective samples with Ag thicknesses a of 25 μm, 30 μmand 35 μm. All of the samples of model A have epi thickness c of 2.18 μmand the diagonal length L of 2.69 mm.

In each of the samples, both on resistance R and chip warpage W weremeasured, or only chip warpage W was measured. FIG. 4A illustrates themeasured values of on resistance R and chip warpage W, with Agthicknesses a, Si thicknesses b and ratios Q of the samples.

FIG. 4B is a diagram illustrating measured values of on resistances andchip warpage of samples of model B. In model B, a plurality of sampleswith Si thicknesses b being between 28 μm and 93 μm were produced withrespect to each of Ag thicknesses a of 25 μm, 30 μm and 35 μm. All thesamples of model B have epi thickness c of 2.75 μm and the diagonallengths L of 3.92 mm.

Both of on resistance R and chip warpage W were measured, or only chipwarpage W was measured for each of the samples. FIG. 4B illustratesmeasured values of on resistance R and chip warpage W, with Agthicknesses a, Si thicknesses b and ratios Q.

FIG. 4C is a diagram illustrating measured values of on resistances andchip warpage of samples of model C. For model C, a plurality of sampleswith Si thicknesses b being between 28 μm and 93 μm were produced withrespect to each of Ag thicknesses a of 25 μm, 30 μm and 35 μm. All thesamples of model C have epi thickness c of 2.18 μm, and diagonal lengthsL of 3.63 mm.

For each of the samples, both on resistance R and chip warpage W weremeasured, or only chip warpage W was measured. FIG. 4C shows measuredvalues of on resistances R and chip warpage W, with Ag thicknesses a, Sithicknesses b and ratios Q of the samples.

Hereinafter, based on measurement results shown in FIG. 4A to FIG. 4C,various favorable conditions of ratio Q is defined from a plurality ofdifferent viewpoints.

(Achievement Condition of on Resistance Specification Maximum Value andChip Warpage Specification Maximum Value in all Models)

FIG. 5 is a graph illustrating dependence of chip warpage W on ratio Qand dependence of on resistance R on ratio Q. A vertical axis at a leftside in FIG. 5 represents chip warpage W, a vertical axis at a rightside represents on resistance R, and a horizontal axis represents ratioQ.

In FIG. 5, all the measurement results shown in FIG. 4A to FIG. 4C areplotted.

In all of models A, B and C, among the samples with same ratio Q,samples having thinner Ag thickness a have larger chip warpage W, andthe sample with Ag thickness a=25 μm is located at an upper limit (worstvalue) of a distribution of chip warpage W. It is considered that chipwarpage W is large because the sample with thin Ag thickness a also hasthin Si thickness b. Thus, the regression curves of chip warpage W ofthe samples with Ag thickness of 25 μm of the respective models areobtained, and are used as curves W(A) worst, W(B) worst, and W(C) worstexpressing worst values of chip warpage W. Mathematical expressionsexpressing the respective curves are described in the graphs.

Further, in all of models A, B and C, among the samples with same ratioQ, the samples with thicker Ag thickness a have larger on resistance R,and the sample with Ag thickness a=35 μm is located at an upper limit(worst value) of a distribution of on resistance R. It is consideredthat on resistance R becomes large because in the samples with thick Agthickness a, Si thickness b is also thick. Thus, the regression curvesof on resistance R of samples with Ag thickness of 35 μm of therespective models are obtained, and are used as curves R(A) worst, R(B)worst, and R(C) worst that express worst values of on resistance R.Mathematical expressions expressing the respective curves are describedin the graphs.

FIG. 5 further shows line R (A, B) max showing an on resistancespecification maximum values and line R (A, B) typ showing an onresistance specification standard value of models A and B. Further, FIG.5 shows line R(C) max showing an on resistance specification maximumvalue and line R(C) typ showing an on resistance specification standardvalue of model C. Further, FIG. 5 shows line W(ALL) max showing a chipwarpage specification maximum value of all the models.

Here, attention is paid to intersection point P1 of curve R(A) worst andline R(A, B) max. Ratio Q=0.32 in intersection point P1 is a minimumvalue of ratio Q with which a multi-transistor chip of model A achievesan on resistance specification maximum value of 2.85 mΩ. That is, themulti-transistor chip of model A that satisfies ratio Q≥0.32 achievesthe on resistance specification maximum value of 2.85 mΩ.

In ratio Q≥0.32, curve R(B) worst is below line R(A, B) max, and curveR(C) worst is below line R(C) max. Accordingly, on resistances R ofmulti-transistor chips of models B and C that satisfy ratio Q≥0.32achieve respective on resistance specification maximum values 2.85 mΩand 1.95 mΩ.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and ratio Q of the thickness of the backside electrode tothe thickness of the semiconductor layer including the semiconductorsubstrate and the low-concentration impurity layer is 0.32 or more.

According to the configuration, in any of the multi-transistor chips ofmodels A, B and C according to the embodiment, on resistance R is equalto or less than an on resistance specification maximum value of themodel.

Next, attention is paid to intersection point P2 of curve W(B) worst andline W(ALL) max. Ratio Q=0.56 in intersection point P2 is a maximumvalue of ratio Q with which a multi-transistor chip of model B achievesa chip warpage specification maximum value of 40 μm. That is, themulti-transistor chip of model B that satisfies ratio Q≤0.56 achieves achip warpage specification maximum value of 40 μm.

In ratio Q≤0.56, both of curves W(A) worst and W(C) worst are below lineW(ALL) max. Accordingly, chip warpages W of multi-transistor chips ofboth models A and C that satisfy ratio Q≤0.56 achieve the chip warpagespecification maximum value of 40 μm.

From these results, in addition to the lower limit 0.32 of ratio Qdescribed above, an upper limit 0.56 of ratio Q may be provided.Specifically, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and ratio Q of the thickness of the backside electrode tothe thickness of the semiconductor layer including the semiconductorsubstrate and the low-concentration impurity layer may be at least 0.32and at most 0.56.

According to the configuration, in any one of the multi-transistor chipsof models A, B and C according to the embodiment, on resistance R isequal to or less than an on resistance specification maximum value ofthe model, and chip warpage is equal to or less than a chip warpagespecification maximum value.

In a semiconductor device according to an aspect of the presentdisclosure, the thickness of the low-concentration impurity layer may be2.75 μm or more.

According to the configuration, as described in advance, the drainbreakdown voltage of multi-transistor chip 1 can be made 20 V. The drainbreakdown voltage is determined by thickness c of low-concentrationimpurity layer 33 from a generation principle of the drain breakdownvoltage, and does not depend on a package size (diagonal length L).Consequently, limitations on thickness c of low-concentration impuritylayer 33 of 2.75 μm or more is also applied to all the multi-transistorchips of models A, B and C which differ in diagonal length L from oneanother, and the drain breakdown voltages of the multi-transistor chipscan be increased to 20 V.

(Favorable Condition of Ratio Q Dependent on Diagonal Length L)

In the above description, the lower limit value of ratio Q that achievesthe on resistance specification maximum value and the upper limit valueof ratio Q that achieves the chip warpage specification maximum valueare defined by constants in all the models. In contrast with this,hereinafter, defining the lower limit value and the upper limit value ofratio Q by depending on diagonal length L (that is, by a function ofdiagonal length L) will be discussed.

As described in advance, in FIG. 5, ratio Q=0.56 in intersection pointP2 of curve W(B) worst and line W(ALL) max is a maximum value of ratio Qwith which the multi-transistor chip of model B achieves chip warpagespecification maximum value of 40 μm. Likewise, ratio Q=0.70 inintersection point P5 of curve W(C) worst and line W(ALL) max is amaximum value of ratio Q with which the multi-transistor chip of model Cachieves chip warpage specification maximum value of 40 μm.

Here, diagonal lengths L of the multi-transistor chips of models B and Care respectively 3.92 mm and 3.63 mm, so that ratios Q that are 0.56 and0.70 in intersection points P2 and P5 are linearly interpolated(proportionally allotted) with respect to diagonal length L. In themulti-transistor chips of models B and C, epi thicknesses are differentfrom each other, and are 2.75 μm and 2.18 μm respectively, but the epithicknesses do not substantially influence chip warpage, so that theinterpolation is effective.

FIG. 6 is a graph illustrating dependence of ratio Q on diagonal lengthL. In FIG. 6, a vertical axis represents ratio Q, and a horizontal axisrepresents diagonal length L. Line Qmax shown at an upper side in FIG. 6is a line obtained by linearly interpolating coordinate pointsconstituted of ratios Q in respective intersection point P2 andintersection point P5 in FIG. 5 and diagonal lengths L of correspondingsamples, and is expressed as Qmax=−0.48L+2.45. An extrapolation portionof Qmax is shown by a broken line.

A point on line Qmax is a maximum value of ratio Q with which themulti-transistor chip of diagonal length L achieves the chip warpagespecification maximum value of 40 μm. That is, the multi-transistor chipof diagonal length L that satisfies ratio Q≤0.48L+2.45 achieves the chipwarpage specification maximum value of 40 μm.

From this result, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the diagonal dimension of the semiconductorsubstrate is set as L mm, the ratio of the thickness of the backsideelectrode to the thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is(−0.48×L+2.45) or less.

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, chip warpage is equal toor less than the chip warpage specification maximum value of 40 μm.

Note that chip warpage does not depend on the conductivity type of asemiconductor. Accordingly, the aforementioned configuration thatachieves the chip warpage specification maximum value is appliedregardless of whether the multi-transistor chip is of an N-channel typeor a P-channel type.

Next, a lower limit value of dependence of ratio Q on diagonal length Lwill be defined. Here, from a viewpoint of achieving the on resistancespecification standard value, attention is paid to intersection point P4of curve R(C) worst and line R(C) typ, and intersection point P6 ofcurve R(A) worst and line R(A) typ in FIG. 5. Ratio Q=0.33 inintersection point P4 is a minimum value of ratio Q with which themulti-transistor chip of model C achieves an on resistance specificationstandard value of 1.63 mΩ. Ratio Q=0.78 in intersection point P6 is aminimum value of ratio Q with which the multi-transistor chip of model Aachieves an on resistance specification standard value of 2.38 mΩ.

Here, since diagonal lengths L of the multi-transistor chips of models Aand C are respectively 2.69 mm and 3.63 mm, ratios Q that are 0.33 and0.78 in intersection points P4 and P6 are linearly interpolated withrespect to diagonal length L. The epi thicknesses that influence the onresistances are both 2.18 μm and equal among the multi-transistor chipsof models A and C, so that the interpolation is effective.

Line Qmin shown at a lower side in FIG. 6 is a line obtained by linearlyinterpolating coordinate points constituted of ratios Q in respectiveintersection point P4 and intersection point P6 in FIG. 5 and diagonallengths L of corresponding samples, and is expressed asQmin=−0.48L+2.07. An extrapolation portion of Qmin is shown by a brokenline.

A point on line Qmin is a minimum value of ratio Q with which themulti-transistor chip with diagonal length L achieves the on resistancespecification standard value. That is, the multi-transistor chip withdiagonal length L that satisfies ratio Q≥0.48L+2.07 achieves the onresistance specification standard value.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the diagonal dimension of the semiconductorsubstrate is set as L mm, the ratio of the thickness of the backsideelectrode to the thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is(−0.48×L+2.07) or more.

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, the on resistance R isequal to or less than an on resistance specification standard value.

The upper limit value and the lower limit value of dependence of ratio Qon diagonal length L defined in the above may be used in combination.That is, in a semiconductor device according to an aspect of the presentdisclosure, when a diagonal dimension of the semiconductor substrate isL mm, ratio Q of the thickness of a backside electrode to the thicknessof the semiconductor layer including the semiconductor substrate and thelow-concentration impurity layer may be (−0.48L+2.07) to (−0.48L+2.45)inclusive.

According to the configuration, in the multi-transistor chip havingdiagonal length L according to the embodiment, on resistance R is equalto or less than the on resistance specification standard value, and thechip warpage is equal to or less than the chip warpage specificationmaximum value.

(Favorable Condition of Ratio Q of Each Model)

In the above, the favorable condition of ratio Q which is applied to allthe models in common is defined. In contrast with this, a favorablecondition of ratio Q that is applied to only any one of models A, B andC will be discussed hereinafter.

(Favorable Condition of Ratio Q in Model A)

A favorable condition of ratio Q that is applied to only themulti-transistor chip of model A will be discussed.

First, from a viewpoint of achieving the on resistance specificationstandard value of the multi-transistor chip of model A, attention ispaid to intersection point P6 in FIG. 5 again. Ratio Q=0.78 inintersection point P6 is a minimum value of ratio Q with which themulti-transistor chip of model A achieves an on resistance specificationstandard value of 2.38 mΩ. That is, the multi-transistor chip of model Athat satisfies ratio Q≥0.78 achieves an on resistance specificationstandard value of 2.38 mΩ.

Application of the condition of ratio Q≥0.78 to the multi-transistor ofmodel A is clarified by defining the condition of ratio Q≥0.78 on aprecondition. The precondition is the size of model A in which epithickness c is 2.18 μm or less and diagonal length L is 2.69 mm or more.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the thickness of the low-concentration impuritylayer is 2.18 μm or less and the diagonal dimension of the semiconductorsubstrate in a plan view is 2.69 mm or more, ratio Q of the thickness ofthe backside electrode to the thickness of the semiconductor layerincluding the semiconductor substrate and the low-concentration impuritylayer is 0.78 or more.

According to the configuration, in a multi-transistor chip of model Aaccording to the embodiment, the on resistance specification standardvalue is achieved.

Next, as for the multi-transistor chip of model A, it is considered todefine ratio Q to achieve the on resistance specification standard valueby compensating increase of on resistance R due to dimensional variationof epi thickness c or diagonal length L. Specifically, with epithickness c or diagonal length L having a dimensional error thatincreases on resistance R as a precondition, ratio Q that realizes onresistance smaller than the on resistance specification standard valueis defined. Increase and decrease of on resistance are cancelled out bymatching an increase amount of the on resistance due to a dimensionalerror of epi thickness c or diagonal length L with a decrease amount ofthe on resistance defined by ratio Q from the on resistancespecification standard value, and the on resistance specificationstandard value is achieved. For convenience of understanding, theincrease and decrease amount of the on resistance to be cancelled outwill be described as 0.1 mΩ as an example hereinafter.

FIG. 7 is a graph explaining derivation of ratio Q that cancels outexcessive on resistance due to a dimensional variation of epi thicknessc or diagonal length L.

First, an error of epi thickness c and a dimensional error of diagonallength L that increase the on resistance by 0.1 mΩ are calculated asfollows.

A sample group in which samples with same Ag thickness a and same ratioQ are available with respect to models A, B and C is selected.

An on resistance value corresponding to epi thickness c=2.18 μm anddiagonal length L=3.92 mm is extrapolated (broken line enclosure in FIG.7) by proportionally allotting on resistance R of the sample of model A(epi thickness c=2.18 μm, diagonal length L=2.69 mm), and on resistanceR of the sample of model C (epi thickness c=2.18 μm, diagonal lengthL=3.63 mm) in diagonal length L (thin arrows in FIG. 7). A value ofdiagonal length L corresponding to 0.1 mΩ is obtained from aproportionality factor of diagonal length L and on resistance Rcalculated at this time. According to experimental data of the presentdisclosure, the value of diagonal length L is found as 0.08 mm. Thismeans that when diagonal length L decreases by 0.08 mm with same epithickness c, on resistance R increases by 0.1 mΩ at the maximum.

A proportionality factor of epi thickness c and on resistance R isobtained (thick arrows in FIG. 7) from on resistance R which isextrapolated (corresponding to epi thickness c=2.18 μm, and diagonallength L=3.92 mm) and on resistance R of the sample of model B (epithickness c=2.75 μm, diagonal length L=3.92 mm), and epi thickness ccorresponding to 0.1 mΩ is obtained. According to the experimental dataof the present disclosure, epi thickness c is obtained as 0.06 μm. Thismeans that when epi thickness c increases by 0.06 μm with same diagonallength L, on resistance R increases by 0.1 mΩ at the maximum.

From the above, it is estimated that the on resistance in a case whereepi thickness c is 2.18 μm or less and diagonal length L is 2.61 mm to2.69 mm inclusive, or the epi thickness is 2.18 μm to 2.24 μm inclusiveand diagonal length L is 2.69 mm or more increases by 0.1 mΩ at themaximum as compared with on resistance in a typical size in which epithickness c is 2.18 μm or less and diagonal length L is 2.69 mm or more.

Based on the understanding, ratio Q with which on resistance R=2.28 mΩthat is smaller than the on resistance specification standard value of2.38 mΩ by 0.1 mΩ is obtained in the multi-transistor chip of model A isapplied under a condition where increase of on resistance by 0.1 mΩ isestimated at the maximum. Note that as for ratio Q with which onresistance R=2.28 mΩ is obtained, on resistance R=2.28 mΩ is obtainedspecifically by ratio Q=0.94 in intersection point P7 of curve R(A)worst in FIG. 7, and line R=2.28 mΩ that is obtained by shifting downline R(A, B) typ by 0.1 mΩ.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, when the thickness of the low-concentration impurity layeris 2.18 μm or less and the diagonal dimension of the semiconductor in aplan view ranges from 2.61 mm to 2.69 mm, inclusive, or when thethickness of the low-concentration impurity layer ranges from 2.18 μm to2.24 μm, inclusive, and the diagonal dimension of the semiconductorsubstrate in a plan view is 2.69 mm or more, the ratio of the thicknessof a backside electrode to the thickness of the semiconductor layerincluding the semiconductor substrate and the low-concentration impuritylayer is may be 0.94 or more.

According to the configuration, even when a multi-transistor chip ofmodel A according to the embodiment has a predetermined dimensionalerror, the on resistance R is equal to or less than an on resistancespecification standard value of model A.

(Favorable Condition of Ratio Q in Model B)

Next, a favorable condition of ratio Q that is applied only to themulti-transistor chip of model B will be discussed.

First, from a viewpoint of achieving the on resistance specificationstandard value of the multi-transistor chip of model B, attention ispaid to intersection point P3 of curve R(B) worst and line R(A, B) typin FIG. 5. Ratio Q=0.25 in intersection point P3 is a minimum value ofratio Q with which the multi-transistor chip of model B achieves an onresistance specification standard value of 2.38 mΩ. That is, themulti-transistor chip of model B that satisfies ratio Q≥0.25 achieves anon resistance specification standard value of 2.38 mΩ.

Application of the condition of ratio Q≥0.25 to the multi-transistor ofmodel B is clarified by defining the condition of ratio Q≥0.25 on aprecondition. The precondition is the size of model B in which epithickness c is 2.75 μm or less, and diagonal length L is 3.92 mm ormore.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the thickness of the low-concentration impuritylayer is 2.75 μm or less, and a diagonal dimension of the semiconductorsubstrate in a plan view is 3.92 mm or more, ratio Q of the thickness ofthe backside electrode to the thickness of the semiconductor layerincluding the semiconductor substrate and the low-concentration impuritylayer is 0.25 or more.

According to the configuration, in a multi-transistor chip of model Baccording to the embodiment, an on resistance specification standardvalue is achieved.

Next, with respect to the multi-transistor chip of model B, ratio Q isdefined to achieve the on resistance specification standard value bycompensating increase of on resistance R due to a dimensional variationof epi thickness c or diagonal length L. In the same way of thinking asin model A, ratio Q with which the on resistance that is lower than theon resistance specification standard value by 0.1 mΩ is obtained in themulti-transistor chip of model B is applied under the condition in whichincrease of on resistance by 0.1 mΩ at the maximum is estimated.

In the multi-transistor chip of model B, in a case where epi thickness cis 2.75 μm or less and diagonal length L is 3.84 mm to 3.92 mminclusive, or epi thickness c is 2.75 μm to 2.81 μm inclusive anddiagonal length L is 3.92 mm or more, the on resistance in the case isestimated to increase by 0.1 mΩ at the maximum as compared with the onresistance in a regular size in which epi thickness c is 2.75 μm or lessand diagonal length L is 3.92 mm or more.

Based on the understanding, ratio Q with which on resistance R=2.28 mΩthat is smaller than the on resistance specification standard value of2.38 mΩ by 0.1 mΩ is obtained in the multi-transistor chip of model B isapplied under a condition in which increase of the on resistance by 0.1mΩ at the maximum is estimated. As for ratio Q with which on resistanceR=2.28 mΩ is obtained, on resistance R=2.28 mΩ is obtained specificallyby ratio Q=0.33 in intersection point P8 of curve R(B) worst in FIG. 7,and line R=2.28 mΩ obtained by shifting down line R(C) typ by 0.1 mΩ.

From this result, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the thickness of the low-concentration impuritylayer is 2.75 μm or less and the diagonal dimension ranges from 3.84 mmto 3.92 mm, inclusive, or when the thickness of the low-concentrationimpurity layer ranges from 2.75 μm to 2.81 μm, inclusive, and thediagonal dimension of the semiconductor substrate in a plan view is 3.92mm or more, the ratio of the thickness of the backside electrode to thethickness of the semiconductor layer including the semiconductorsubstrate and the low-concentration impurity layer is 0.33 or more.

According to the configuration, even when a multi-transistor chip ofmodel B according to the embodiment has a predetermined dimensionalerror, on resistance R is equal to or less than the on resistancespecification standard value of model B.

Further, in the multi-transistor chip of model B, ratio Q may be set as0.56 or less from a viewpoint of achieving the chip warpagespecification maximum value. Ratio Q=0.56 is obtained from intersectionpoint P2 in FIG. 5.

According to the configuration, in a multi-transistor chip of model Baccording to the embodiment, a chip warpage specification maximum valueis achieved.

(Favorable Condition of Ratio Q in Model C)

Next, a favorable condition of ratio Q that is applied only to themulti-transistor chip of model C will be discussed.

First, from a viewpoint of achieving the on resistance specificationstandard value of the multi-transistor chip of model C, attention ispaid to intersection point P4 in FIG. 5 again. Ratio Q=0.33 inintersection point P4 is a minimum value of ratio Q with which themulti-transistor chip of model C achieves an on resistance specificationstandard value of 1.63 mΩ. That is, the multi-transistor chip of model Cthat satisfies ratio Q≥0.33 achieves an on resistance specificationstandard value of 1.63 mΩ.

Application of the condition of ratio Q≥0.33 to the multi-transistor ofmodel C is clarified by defining the condition of ratio Q≥0.33 on aprecondition. The precondition is a size of model C in which epithickness c is 2.18 μm or less, and diagonal line L is 3.63 mm or more.

From this result, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the thickness of the low-concentration impuritylayer is 2.18 μm or less and the diagonal dimension of the semiconductorsubstrate in a plan view is 3.63 mm or more, ratio Q of the thickness ofthe backside electrode to the thickness of the semiconductor layerincluding the semiconductor substrate and the low-concentration impuritylayer is 0.33 or more.

According to the configuration, in a multi-transistor chip of model Caccording to the embodiment, an on resistance specification standardvalue is achieved.

Next, as for the multi-transistor chip of model C, ratio Q is defined toachieve the on resistance specification standard value by compensatingincrease of on resistance R due to a dimensional variation of epithickness c or diagonal length L. In the same way of thinking as inmodel A, ratio Q with which the on resistance lower than the onresistance specification standard value by 0.1 mΩ in themulti-transistor chip of model C is applied under the condition in whichincrease of the on resistance by 0.1 mΩ at the maximum is estimated.

In the multi-transistor chip of model C, in a case where epi thickness cis 2.18 μm or less and diagonal length L is 3.55 mm to 3.63 mminclusive, or epi thickness c is 2.18 μm to 2.24 μm inclusive, anddiagonal length L is 3.63 mm or more, an on resistance in the case isestimated to increase by 0.1 mΩ at the maximum as compared with the onresistance in a regular size in which epi thickness c is 2.18 μm or lessand diagonal length L is 3.63 mm or more.

Based on the above understanding, ratio Q with which on resistanceR=1.53 mΩ that is smaller than on resistance specification standardvalue of 1.63 mΩ by 0.1 mΩ in the multi-transistor chip of model C isapplied under a condition in which increase of on resistance by 0.1 mΩat the maximum is estimated. As for ratio Q with which on resistanceR=1.53 mΩ is obtained, on resistance R=1.53 mΩ is obtained specificallyby ratio Q=0.43 in intersection point P9 of curve R(C) worst in FIG. 7and line R=1.53 mΩ obtained by shifting down line R(C) typ by 0.1 mΩ.

From this result, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to theembodiment, and when the thickness of the low-concentration impuritylayer is 2.18 μm or less and the diagonal dimension of the semiconductorsubstrate in a plan view ranges from 3.55 mm to 3.63 mm, inclusive, orwhen the thickness of the low-concentration impurity layer ranges from2.18 μm to 2.24 μm, inclusive, and the diagonal dimension of thesemiconductor substrate in a plan view is 3.63 mm or more, the ratio ofthe thickness of the backside electrode to the thickness of thesemiconductor layer including the semiconductor substrate and thelow-concentration impurity layer is 0.43 or more.

According to the configuration, in a multi-transistor chip of model Caccording to the embodiment, on resistance R is equal to or less thanthe on resistance specification standard value of model C.

Further, in the multi-transistor chip of model C, ratio Q may be set as0.70 or less from a viewpoint of achieving the chip warpagespecification maximum value. Ratio Q=0.70 is obtained from intersectionpoint P5 in FIG. 5.

According to the configuration, in a multi-transistor chip of model Caccording to the embodiment, a chip warpage specification maximum valueis achieved.

(Favorable Condition Concerning Ratio of Thickness of First and SecondSource Electrodes, and Thickness of Backside Electrode)

Referring to FIG. 1 again, a favorable condition concerning a ratio ofthickness of first source electrode 11 and second source electrode 21,and thickness of backside electrode 31 will be described.

First portions 12 and 22 of first and second source electrodes 11 and 21are provided to have a sufficient thickness with which favorable bondingperformance with a conductive bonding material such as solder isobtained at a time of mounting.

Further, second portion 13 of first source electrode 11 is provided tohave a sufficient thickness with which connection of first portion 12 offirst source electrode 11 to the semiconductor layer can be taken, andsecond portion 23 of second source electrode 21 is provided to have asufficient thickness with which connection of first portion 22 of secondsource electrode 21 to the semiconductor layer can be taken.

Further, it is known that as second portions 13 and 23 become thicker,the on resistance of the multi-transistor chip decreases. This isconfirmed by an experiment in which a plurality of samples differing inthickness of second portions 13 and 23 are produced, and the onresistance of each of the samples is measured. The on resistance rapidlyreduces between the thicknesses of second portions 13 and 23 of 2 μm and4 μm, and reduction becomes slow when the thicknesses are 4 μm or more.

Further, the thicknesses of all of first portions 12 and 22 and secondportions 13 and 23 may be thinner from viewpoints of material cost andmanufacturing cost.

As a result of considering a design example that can be applied to allof models A, B and C, and achieves bonding performance with theconducting bonding material, a lower on resistance, and cost reductionin a well-balanced way, based on the above knowledge, a favorablecondition that the thicknesses of first portions 12 and 22 are set as 3μm, and the thicknesses of second portions 13 and 23 are set as 4 μm hasbeen found out. Thicknesses d1 and d2 of first and second sourceelectrodes 11 and 21 in this case are both 7 μm.

In the multi-transistor chips in which both thicknesses d1 and d2 offirst and second source electrodes 11 and 21 are 7 μm, and thethicknesses of backside electrodes 31 are 25 μm, 30 μm and 35 μm, ratiosof the thicknesses of first and second source electrodes 11 and 21 tobackside electrodes 31 are 0.28, 0.23 and 0.20, respectively.

From these results, a semiconductor device according to an aspect of thepresent disclosure is a multi-transistor chip according to thisembodiment, and the ratio of the thickness of the first source electrodeto the thickness of the backside electrode is 0.28 or less, and theratio of the thickness of the second source electrode to the thicknessof the backside electrode is 0.28 or less.

According to the configuration, with respect to the thicknesses 25 μm,30 μm and 35 μm of backside electrode 31, favorable thicknesses of firstsource electrode 11 and second source electrode 12 are defined, so thatthe multi-transistor chip is obtained, in which the bonding performancewith the conductive bonding material, lower on resistance and costreduction are achieved in a well-balanced way.

The ratio of the thicknesses of first and second source electrodes 11and 12, and backside electrode 31 does not depend on the conductivitytype of the semiconductor. Accordingly, the aforementioned configurationis applied regardless of whether the multi-transistor chip is of anN-channel type or a P-channel type.

(Electrode Disposition that Reduces on Resistance)

Next, electrode disposition that reduces the on resistance will bedescribed.

FIG. 8A and FIG. 8B are top views respectively illustrating examples ofelectrode dispositions of multi-transistor chips of model B and model C.FIG. 8A and FIG. 8B each shows dimensions of essential parts ofelectrodes in a unit of millimeter. Note that in FIG. 8A and FIG. 8B,the S pads and G pads in explanation of FIG. 3 are illustrated aselectrodes.

In FIG. 8A and FIG. 8B, oblong electrodes are first source electrodes 11and second source electrodes 21, and circular electrodes are first gateelectrodes 19 and second gate electrodes 29. First source electrode 11includes first source electrodes S11 to S14, and second source electrode21 includes second source electrodes S21 to S24. First gate electrode 19includes first gate electrode G1, and second gate electrode 29 includessecond gate electrode G2.

As illustrated in FIG. 8A and FIG. 8B, first source electrode S11 andsecond source electrode S21 are disposed along an entirety of boundary Mbetween first region 10 a in which transistor 10 is formed and secondregion 20 a in which transistor 20 is formed.

Here, the entirety may be a portion that occupies 90% or more of a totallength of boundary M. In a specific example of each of FIG. 8A and FIG.8B, while the total length (dimension in a vertical direction of thechip) of boundary M is 1.96 mm, lengths of first electrode S11 andsecond source electrode S21 are 1.81 mm, respectively, and occupy 92% ofthe entire length of boundary M. Further, being disposed along boundaryM may be defined as being extended in a same direction as boundary M,with no other electrode being present between boundary M and firstsource electrode S11, and between boundary M and second source electrodeS21.

Thereby, the path of a current flowing in transistor 10 and transistor20 becomes wider and shorter, so that the on resistance of themulti-transistor chip can be reduced.

Further, as illustrated in FIG. 8A, an interval between first sourceelectrode S11 and second source electrode S21 may be narrower thaneither of the widths of first source electrode S11 and second sourceelectrode S21. In the specific example in FIG. 8A, the interval betweenfirst source electrode S11 and second source electrode S21 is 0.25 mm(that is, 0.60 mm-0.35 mm), and is narrower than the 0.35-mm width ofeach of first source electrode S11 and second source electrode S21.

Thereby, the path of a current flowing in transistor 10 and transistor20 can be further widened and shortened, so that the on resistance ofthe multi-transistor chip can be more effectively reduced.

Further, as illustrated in FIG. 8B, the interval between first sourceelectrode S11 and second source electrode S21 may be wider than eitherof the widths of first source electrode S11 and second source electrodeS21. In the specific example of FIG. 8B, the interval between firstsource electrode S11 and second source electrode S21 is 0.25 mm (thatis, 0.475 mm-0.225 mm), and is wider than the 0.225-mm width of each offirst source electrode S11 and second source electrode S21.

Thereby, a region where solder is not disposed can be taken widely, sothat short circuits between patterns can be avoided while the path ofthe current flowing in transistor 10 and transistor 20 can be made widerand shorter.

(Electrode Disposition Enhancing Connection Reliability)

Next, electrode disposition that enhances connection reliability will bedescribed.

As illustrated in FIG. 8A and FIG. 8B, in the multi-transistor chips ofmodel B and model C, first source electrodes S11 and S14 are disposedbetween boundary M and opposite end T of first region 10 a which isopposite to boundary M and aligned in a direction that crosses boundaryM. The center point of first gate electrode G1 is offset toward oppositeend T from boundary-side ends of first source electrodes S13 and S14that are farthest from boundary M, in first region 10 a. Here, theboundary-side ends are the ends of first source electrodes S13 and S14that are closest to boundary M.

Further, second source electrodes S21 to S24 are disposed betweenboundary M and opposite end U of second region 20 a which is opposite toboundary M and aligned in a direction that crosses boundary M. Thecenter point of second gate electrode G2 is offset toward opposite end Ufrom boundary-side ends of second source electrodes S23 and S24 that arefarthest from boundary M in second region 20 a. Here, the boundary-sideends are the ends of second source electrodes S23 and S24 that areclosest to boundary M

Thereby, first gate electrode G1 and second gate electrode G2 aredisposed farther from boundary M, so that even if chip warpage occurs tothe semiconductor substrate and a vicinity of boundary M is lifted fromthe mounting substrate, solder open hardly occurs between first gateelectrode G1 and second gate electrode G2, and the mounting substrate.

A plurality of characteristic configurations are described above withrespect to disposition of the first and second source electrodes andfirst and second gate electrodes.

Note that disposition of the first and second source electrodes and thefirst and second gate electrodes do not depend on the conductivity typeof the semiconductor. Accordingly, the aforementioned configurationconcerning disposition of the first and second source electrodes and thefirst and second gate electrodes is applied regardless of whether themulti-transistor chip is of an N-channel type or a P-channel type.

(Mounting Structure of Semiconductor Device Excellent in PowerEfficiency and Reliability)

Next, a mounting structure of a semiconductor device that reduces onresistance will be described.

FIG. 9A is a perspective view illustrating an example of a mountingstructure of the multi-transistor chip according to the embodiment, andillustrates an example of semiconductor module 50 in which themulti-transistor chip is mounted.

Semiconductor module 50 includes printed wiring board 51, wiring pattern52, and semiconductor device 56.

Wiring pattern 52 is provided in a strip-shaped region on printed wiringboard 51, and is separated into first section 54 and second section 55by gap 53 that crosses the longitudinal direction.

Semiconductor device 56 is aforementioned multi-transistor chip 1, andis disposed on gap 53 on printed wiring board 51.

Semiconductor device 56 is disposed in an orientation in which firstregion 10 a and second region 20 a align in the longitudinal directionof wiring pattern 52, and first source electrode 11 and second sourceelectrode 21 of semiconductor device 56 are respectively connected tofirst section 54 and second section 55 of wiring pattern 52.

FIG. 9B is a perspective view illustrating one example of a mountingstructure of semiconductor module 59 according to a comparative example.Semiconductor module 59 differs from semiconductor module 50 in thatfirst region 10 a and second region 20 a of semiconductor device 56 aredisposed in an orientation parallel with the longitudinal direction ofwiring pattern 52.

Semiconductor modules 50 and 59 may be power supply modules forsmartphones. In this case, semiconductor modules 50 and 59 are eachdisposed in a casing of a smartphone with a short side of printed wiringboard 51 standing in a thickness direction of the smartphone. Therefore,a length of the short side of printed wiring board 51, that is, a boardwidth is suppressed to approximately 2 mm. In application like this inwhich an upper limit of the board width is strictly limited, providingwiring pattern 52 in the entire board width is effective to reducewiring resistance and enhance power efficiency.

In semiconductor module 50, semiconductor device 56 is disposed in anorientation in which transistors 10 and 20 align in the longitudinaldirection of wiring pattern 52, so that connection of wiring pattern 52provided in the entire board width and semiconductor device 56 can betaken in the entire board width. Therefore, wiring pattern 52 isprovided in an entire width of printed wiring board 51, and wiringresistance (including connection resistance with semiconductor device56) can be effectively reduced.

In contrast with this, in semiconductor module 59, transistors 10 and 20are disposed in an orientation that crosses the longitudinal directionof wiring pattern 52, so that connection of wiring pattern 52 andsemiconductor device 56 can be taken in only a half of the board width,for example. Therefore, even if wiring pattern 52 is provided in theentire board width, connection resistance with semiconductor device 56cannot be reduced effectively.

Further, in semiconductor module 59, a path of a current is in a crankshape (white arrows in FIG. 9B), so that much current does not flow intoportion 52 a of wiring pattern 52, and semiconductor device 56 cannotexhibit a capability corresponding to a size. Conversely, currentsconcentrate on portion 52 b of wiring pattern 52, and for example,reduction in reliability of printed wiring board 51 due toelectromigration can occur. In semiconductor module 50 in which the pathof a current is rectilinear (white arrows in FIG. 9A), a large imbalancedoes not occur in current density, so that these problems hardly occur.

According to semiconductor module 50 in which semiconductor device 56 isdisposed in the orientation in which first region 10 a and second region20 a align in the longitudinal direction of wiring pattern 52, that is,the orientation in which transistors 10 and 20 align in the longitudinaldirection of wiring pattern 52, the mounting structure of thesemiconductor device excellent in power efficiency and reliability canbe obtained.

Note that the mounting structure of the semiconductor device describedabove does not depend on the conductivity type of the semiconductor.Accordingly, the aforementioned configuration is applied regardlesswhether the multi-transistor chip is of an N-channel type or a P-channeltype.

(Packaged Semiconductor Device)

While in the above, multi-transistor chip 1 is described as the chipsize package, multi-transistor chip 1 is not limited to the chip sizepackage. Multi-transistor chip 1 may be configured as a packagedsemiconductor device by being sealed in a resin package or the like. Thepackaged semiconductor device like this may be a packaged semiconductordevice in which multi-transistor chip 1 illustrated in FIG. 1 and FIG. 2is simply sealed in a resin package or the like, for example.

That is, the packaged semiconductor device according to an aspect of thepresent disclosure includes the aforementioned semiconductor device,that is, multi-transistor chip 1, and a package in whichmulti-transistor chip 1 is sealed and which has a first source externalterminal, a first gate external terminal, a second source externalterminal, and a second gate external terminal. The first source externalterminal, the first gate external terminal, the second source externalterminal, and the second gate external terminal of the package areelectrically connected respectively to first source electrode 11, firstgate electrode 19, second source electrode 21, and second gate electrode29 of multi-transistor chip 1.

According to the configuration, the packaged semiconductor device isobtained, which has multi-transistor chip 1 excellent in reduction ofthe on resistance and suppression of chip warpage, and having highdurability against environmental conditions.

Next, a packaged semiconductor device having an external terminalconnected to a common drain of transistors 10 and 20 of multi-transistorchip 1 will be described.

FIG. 10 is a charge and discharge circuit of a smartphone or the likesimilarly to FIG. 2, and illustrates a case of using packagedsemiconductor device 1 a with multi-transistor chip 1 sealed in apackage by inserting packaged semiconductor device 1 a into a low sideof the charge and discharge circuit, as a charge and discharge switchcontrolling conduction of two-way currents, as one application example.The application example in FIG. 10 differs from the application examplein FIG. 2 in that packaged semiconductor device 1 a has common drainexternal terminal 39. Common drain external terminal 39 is electricallyconnected to backside electrode 31 of multi-transistor chip 1illustrated in FIG. 1.

In the charge and discharge circuit in FIG. 10, common drain terminal 39is used as a monitor terminal of a drain voltage common to transistors10 and 20 of multi-transistor chip 1. When control IC 2 a controls acharge current and a discharge current of battery 3, control IC 2 amonitors a voltage of common drain terminal 39, and when the voltagedeviates from a normal voltage range (a range of 3.5 V to 4.5 V, forexample) of battery 3, control IC 2 a determines the state as anabnormal state, and stops a charge and discharge operation. Thereby,excessive discharge and excessive charge of battery 3 is prevented.

Further, although not illustrated, a charge circuit that uses commondrain terminal 39 as a path of a precharge current, and a dischargecircuit that uses common drain terminal 39 as a path of a dischargecurrent can be also configured.

In this way, the packaged semiconductor device according to an aspect ofthe present disclosure includes the aforementioned semiconductor device,that is, multi-transistor chip 1, and a package in which thesemiconductor device is sealed and which has a first source externalterminal, a first gate external terminal, a second source externalterminal, a second gate external terminal, and a common drain externalterminal. The first source external terminal, the first gate externalterminal, the second source external terminal, the second gate externalterminal, and the common drain external terminal of the package areelectrically connected respectively to first source electrode 11, firstgate electrode 19, second source electrode 21, second gate electrode 29,and backside electrode 31 of multi-transistor chip 1.

According to the configuration, the packaged semiconductor device isobtained, which has the multi-transistor chip excellent in reduction ofthe on resistance and suppression of chip warpage, has high durabilityagainst the environmental conditions, and can use the common drainexternal terminal in voltage monitor for the common drain of the firstand second vertical MOS transistors in the multi-transistor chip, forexample.

Although the semiconductor device according to one or a plurality ofaspects of the present disclosure is described based on exemplaryembodiments, the present disclosure is not limited to the embodiments.Forms obtained by applying various modifications to the presentembodiments that may be conceived of by a person skilled in the art, andforms constructed by combining components in different embodiments, aslong as the forms do not depart from the essence of the presentdisclosure, may be included in the scope of one or a plurality ofaspects of the present disclosure.

INDUSTRIAL APPLICABILITY

A semiconductor device according to the present disclosure can be widelyused in a power supply circuit, for example, as a CSP typemulti-transistor chip.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical metal-oxide semiconductor (MOS) transistorthat is located in a first region in the low-concentration impuritylayer; and a second vertical MOS transistor that is located in a secondregion adjacent to the first region in the low-concentration impuritylayer, wherein the first vertical MOS transistor includes a first sourceelectrode and a first gate electrode on a surface of thelow-concentration impurity layer, the second vertical MOS transistorincludes a second source electrode and a second gate electrode on thesurface of the low-concentration impurity layer, the semiconductorsubstrate serves as a common drain region of a first drain region of thefirst vertical MOS transistor and a second drain region of the secondvertical MOS transistor, a thickness of the backside electrode rangesfrom 25 μm to 35 μm, inclusive, and a ratio of the thickness of thebackside electrode to a thickness of a semiconductor layer including thesemiconductor substrate and the low-concentration impurity layer is 0.32or more.
 2. The semiconductor device according to claim 1, wherein theratio is 0.56 or less.
 3. The semiconductor device according to claim 1,wherein a thickness of the low-concentration impurity layer is 2.75 μmor more.
 4. A semiconductor device, comprising: a semiconductorsubstrate that includes silicon and a first conductivity-type impurity;a low-concentration impurity layer that is on and in contact with thesemiconductor substrate, and includes a first conductivity-type impurityhaving a concentration lower than a concentration of the firstconductivity-type impurity in the semiconductor substrate; a backsideelectrode that is on and in contact with a back surface of thesemiconductor substrate, and includes a metal material; a first verticalmetal-oxide semiconductor (MOS) transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer, wherein the firstvertical MOS transistor includes a first source electrode and a firstgate electrode on a surface of the low-concentration impurity layer, thesecond vertical MOS transistor includes a second source electrode and asecond gate electrode on the surface of the low-concentration impuritylayer, the semiconductor substrate serves as a common drain region of afirst drain region of the first vertical MOS transistor and a seconddrain region of the second vertical MOS transistor, a thickness of thebackside electrode ranges from 25 μm to 35 μm, inclusive, and when adiagonal dimension of the semiconductor substrate in a plan view is setas L mm, a ratio of a thickness of the backside electrode to a thicknessof a semiconductor layer including the semiconductor substrate and thelow-concentration impurity layer is (−0.48×L+2.45) or less.
 5. Asemiconductor device, comprising: a semiconductor substrate thatincludes silicon and a first conductivity-type impurity; alow-concentration impurity layer that is on and in contact with thesemiconductor substrate, and includes a first conductivity-type impurityhaving a concentration lower than a concentration of the firstconductivity-type impurity in the semiconductor substrate; a backsideelectrode that is on and in contact with a back surface of thesemiconductor substrate, and includes a metal material; a first verticalmetal-oxide semiconductor (MOS) transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer, wherein the firstvertical MOS transistor includes a first source electrode and a firstgate electrode on a surface of the low-concentration impurity layer, thesecond vertical MOS transistor includes a second source electrode and asecond gate electrode on the surface of the low-concentration impuritylayer, the semiconductor substrate serves as a common drain region of afirst drain region of the first vertical MOS transistor and a seconddrain region of the second vertical MOS transistor, a thickness of thebackside electrode ranges from 25 μm to 35 μm, inclusive, and when adiagonal dimension in a plan view of the semiconductor substrate is setas L mm, a ratio of a thickness of the backside electrode to a thicknessof a semiconductor layer including the semiconductor substrate and thelow-concentration impurity layer is (−0.48×L+2.07) or more.
 6. Thesemiconductor device according to claim 4, wherein the ratio is(−0.48×L+2.07) or more.
 7. The semiconductor device according to claim1, wherein, when a thickness of the low-concentration impurity layer is2.18 μm or less and a diagonal dimension of the semiconductor substratein a plan view is 2.69 mm or more, the ratio is 0.78 or more.
 8. Thesemiconductor device according to claim 7, wherein, when the thicknessof the low-concentration impurity layer is 2.18 μm or less and thediagonal dimension ranges from 2.61 mm to 2.69 mm, inclusive, or whenthe thickness of the low-concentration impurity layer ranges from 2.18μm to 2.24 μm, inclusive, and the diagonal dimension is 2.69 mm or more,the ratio is 0.94 or more.
 9. The semiconductor device according toclaim 1, wherein, when a thickness of the low-concentration impuritylayer is 2.18 μm or less and a diagonal dimension of the semiconductorsubstrate in a plan view is 3.63 mm or more, the ratio is 0.33 or more.10. The semiconductor device according to claim 9, wherein, when thethickness of the low-concentration impurity layer is 2.18 μm or less andthe diagonal dimension ranges from 3.55 mm to 3.63 mm, inclusive, orwhen the thickness of the low-concentration impurity layer ranges from2.18 μm to 2.24 μm, inclusive, and the diagonal dimension is 3.63 mm ormore, the ratio is 0.43 or more.
 11. The semiconductor device accordingto claim 9, wherein the ratio is 0.70 or less.
 12. The semiconductordevice according to claim 1, wherein, when a thickness of thelow-concentration impurity layer is 2.75 μm or less, and a diagonaldimension of the semiconductor substrate in a plan view is 3.92 mm ormore, the ratio is 0.25 or more.
 13. The semiconductor device accordingto claim 12, wherein, when the thickness of the low-concentrationimpurity layer is 2.75 μm or less and the diagonal dimension ranges from3.84 mm to 3.92 mm, inclusive, or when the thickness of thelow-concentration impurity layer ranges from 2.75 μm to 2.81 μm,inclusive, and the diagonal dimension is 3.92 mm or more, the ratio is0.33 or more.
 14. The semiconductor device according to claim 12,wherein the ratio is 0.56 or less.
 15. A semiconductor device,comprising: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical metal-oxide semiconductor (MOS) transistorthat is located in a first region in the low-concentration impuritylayer; and a second vertical MOS transistor that is located in a secondregion adjacent to the first region in the low-concentration impuritylayer, wherein the first vertical MOS transistor includes a first sourceelectrode and a first gate electrode on a surface of thelow-concentration impurity layer, the second vertical MOS transistorincludes a second source electrode and a second gate electrode on thesurface of the low-concentration impurity layer, the semiconductorsubstrate serves as a common drain region of a first drain region of thefirst vertical MOS transistor and a second drain region of the secondvertical MOS transistor, a ratio of a thickness of the first sourceelectrode to a thickness of the backside electrode is 0.28 or less, anda ratio of a thickness of the second source electrode to the thicknessof the backside electrode is 0.28 or less.
 16. A semiconductor device,comprising: a semiconductor substrate that includes silicon and a firstconductivity-type impurity; a low-concentration impurity layer that ison and in contact with the semiconductor substrate, and includes a firstconductivity-type impurity having a concentration lower than aconcentration of the first conductivity-type impurity in thesemiconductor substrate; a backside electrode that is on and in contactwith a back surface of the semiconductor substrate, and includes a metalmaterial; a first vertical metal-oxide semiconductor (MOS) transistorthat is located in a first region in the low-concentration impuritylayer; and a second vertical MOS transistor that is located in a secondregion adjacent to the first region in the low-concentration impuritylayer, wherein the first vertical MOS transistor includes a plurality offirst source electrodes and a first gate electrode on a surface of thelow-concentration impurity layer, the second vertical MOS transistorincludes a plurality of second source electrodes and a second gateelectrode on the surface of the low-concentration impurity layer, thesemiconductor substrate serves as a common drain region of a first drainregion of the first vertical MOS transistor and a second drain region ofthe second vertical MOS transistor, and a third source electrodeincluded in the plurality of the first source electrodes and a fourthsource electrode included in the plurality of the second sourceelectrodes are source electrodes disposed closest to a boundary betweenthe first region and the second region, the third source electrode andthe fourth source electrode extending along an entirety of the boundary.17. The semiconductor device according to claim 16, wherein an intervalbetween the third source electrode and the fourth source electrode isnarrower than a width of the third source electrode and narrower than awidth of the fourth source electrode.
 18. The semiconductor deviceaccording to claim 16, wherein an interval between the third sourceelectrode and the fourth source electrode is wider than a width of thethird source electrode and wider than a width of the fourth sourceelectrode.
 19. A semiconductor device, comprising: a semiconductorsubstrate that includes silicon and a first conductivity-type impurity;a low-concentration impurity layer that is on and in contact with thesemiconductor substrate, and includes a first conductivity-type impurityhaving a concentration lower than a concentration of the firstconductivity-type impurity in the semiconductor substrate; a backsideelectrode that is on and in contact with a back surface of thesemiconductor substrate, and includes a metal material; a first verticalmetal-oxide semiconductor (MOS) transistor that is located in a firstregion in the low-concentration impurity layer; and a second verticalMOS transistor that is located in a second region adjacent to the firstregion in the low-concentration impurity layer, wherein the firstvertical MOS transistor includes a first source electrode and a firstgate electrode on a surface of the low-concentration impurity layer, thesecond vertical MOS transistor includes a second source electrode and asecond gate electrode on the surface of the low-concentration impuritylayer, the semiconductor substrate serves as a common drain region of afirst drain region of the first vertical MOS transistor and a seconddrain region of the second vertical MOS transistor, the first sourceelectrode comprises, between (i) a boundary of the first region and thesecond region and (ii) a first opposite end which is an end of the firstregion that is opposite to the boundary, a plurality of first sourceelectrodes aligned in a direction that crosses the boundary, the firstgate electrode is disposed at a position that is near a center of thefirst opposite end in a direction parallel to the boundary and between apair of the plurality of first source electrodes in the directionparallel to the boundary, a center point of the first gate electrode isdisposed at a position that is offset toward the first opposite end froma boundary-side end of a first source electrode farthest from theboundary, in the first region, the boundary-side end being an end of thefirst source electrode that is closest to the boundary, the secondsource electrode comprises, between the boundary and a second oppositeend which is an end of the second region that is opposite to theboundary, a plurality of second source electrodes aligned in a directionthat crosses the boundary, the second gate electrode is disposed at aposition that is near a center of the second opposite end in a directionparallel to the boundary and between a pair of the plurality of secondsource electrodes in the direction parallel to the boundary, and acenter point of the second gate electrode is disposed at a position thatis offset toward the second opposite end from a boundary-side end of asecond source electrode farthest from the boundary, in the secondregion, the boundary-side end being an end of the second sourceelectrode that is closest to the boundary.
 20. A semiconductor module,comprising: a printed wiring board; a wiring pattern that is provided ina strip shape on the printed wiring board, and is separated into a firstsection and a second section by a gap that crosses a longitudinaldirection of the wiring pattern; and the semiconductor device accordingto claim 16 that is disposed on the gap, wherein the semiconductordevice is disposed in an orientation in which the first region and thesecond region align in a longitudinal direction of the wiring pattern,and the first source electrode and the second source electrode arerespectively connected to the first section and the second section ofthe wiring pattern.
 21. A packaged semiconductor device, comprising: thesemiconductor device according to claim 1; and a package in which thesemiconductor device is sealed, the package having a first sourceexternal terminal, a first gate external terminal, a second sourceexternal terminal, and a second gate external terminal, wherein thefirst source external terminal, the first gate external terminal, thesecond source external terminal, and the second gate external terminalare electrically connected respectively to the first source electrode,the first gate electrode, the second source electrode, and the secondgate electrode of the semiconductor device.
 22. A packaged semiconductordevice, comprising: the semiconductor device according to claim 1; and apackage in which the semiconductor device is sealed, the package havinga first source external terminal, a first gate external terminal, asecond source external terminal, a second gate external terminal, and acommon drain external terminal, wherein the first source externalterminal, the first gate external terminal, the second source externalterminal, the second gate external terminal, and the common drainexternal terminal are electrically connected respectively to the firstsource electrode, the first gate electrode, the second source electrode,the second gate electrode, and the backside electrode of thesemiconductor device.
 23. The semiconductor device according to claim10, wherein the ratio is 0.70 or less.
 24. The semiconductor deviceaccording to claim 13, wherein the ratio is 0.56 or less.